发明名称 SLURRY FOR CHEMICAL-MECHANICAL POLISHING AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide slurry for CMP with which an excellent polished surface can be obtained through a CMP process of a manufacturing process of a semiconductor device and the throughput and yield of the manufacture of the semiconductor device can be improved as a result, and to provided a manufacturing method of the semiconductor device. <P>SOLUTION: The slurry for CMP as an embodiment of the present invention is characterized by containing one kind or two kinds or more of water-soluble polymer selected from a group of polyacrylic acid, polymethacrylic acid, and salts thereof of 1,000,000 to 10,000,000 in weight-average molecular weight,β-cyclodextrin, colloidal silica and water. The manufacturing method of the semiconductor device as an embodiment of the present invention is characterized by using the CMP slurry as the embodiment of the present invention for a touch-up polishing process. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009158810(A) 申请公布日期 2009.07.16
申请号 JP20070337248 申请日期 2007.12.27
申请人 TOSHIBA CORP 发明人 MINAMI FUKUGAKU;KURASHIMA NOBUYUKI;SHIGETA ATSUSHI;TATEYAMA YOSHIKUNI;YANO HIROYUKI
分类号 H01L21/304;B24B37/00;C09K3/14 主分类号 H01L21/304
代理机构 代理人
主权项
地址