| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is more highly integrated, thinned, miniaturized, more sophisticated and consumes lower power than conventional devices. <P>SOLUTION: A semiconductor element layer separated from a substrate using a peeling layer is laminated on a semiconductor element layer formed on another substrate and covered with a planarized inorganic insulation layer. After peeling off the upper part of the semiconductor element layer from the substrate, the peeling layer is removed to expose the inorganic insulation layer formed under the semiconductor element layer. The planarized inorganic insulation layer is closely contacted to an inorganic insulation film to join them. A semiconductor layer included in the semiconductor element layer is a single crystal semiconductor layer removed from a semiconductor substrate and transferred to the substrate on which the device is formed. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
