| 摘要 |
A sacrifice layer 36 is exposed through a chemical charging port 31 so that the sacrifice layer 36 and sacrifice layer 35 are etched and removed by an etchant introduced from the chemical charging port 31. Since the surface of an Si substrate 22 is exposed to an etching window 34 corresponding to the removed portion of the sacrifice layer 35, the Si substrate 22 is crystal anisotropically etched below the etching window 34 to form a cavity 23. In contrast, in a space corresponding to the etched and removed portion of the sacrifice layer 36, since the surface of the Si substrate 22 is covered with a protective film 32, the Si substrate 22 is not etched to form a bent hole 26 therein. The cavity can be formed in the semiconductor substrate by an etching process from the surface side. Moreover, a bent hole having a great acoustic resistance can be easily formed.
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