摘要 |
<p>Methods and associated structures of forming microelectronic devices are described. Those methods may include forming a magnetic material on a substrate, wherein the magnetic material comprises rhenium, cobalt, iron and phosphorus, and annealing the magnetic material at a temperature below about 330 degrees Celsius, wherein the coercivity of the annealed magnetic material is below about 1 Oersted.</p> |
申请人 |
INTEL CORPORATION;MCCLOSKEY, PAUL;GARDNER, DONALD S.;JAMIESON, BRICE;ROY, SAIBAL;O'DONNELL, TERENCE |
发明人 |
MCCLOSKEY, PAUL;GARDNER, DONALD S.;JAMIESON, BRICE;ROY, SAIBAL;O'DONNELL, TERENCE |