发明名称 |
RADIO FREQUENCY MEMS SWITCH |
摘要 |
There is disclosed a method of fabricating radio frequency surface microelectromechanical (MEMS) switch. The method utilizes four masks, each configured through photolithography process at different stages that resulted in substantially planar silicon dioxide, critical in providing better mechanical performance of the RF MEMS switch. The steps include, among others, depositing silicon on glass liquid to fill small holes for a smooth silicon oxide surface, employing back etch process and performing wet etching by using chemical solution called Pad Etch. An RF MEMS switch that comprise of a lower electrode (30) formed on the surface of a silicon substrate (31), an aluminum membrane (32) suspended over the electrode and a dielectric layer (33) covering the lower electrode fabricated through the process is also disclosed.
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申请公布号 |
WO2009057988(A3) |
申请公布日期 |
2009.07.16 |
申请号 |
WO2008MY00122 |
申请日期 |
2008.10.22 |
申请人 |
MIMOS BERHAD;SULAIMAN, SURAYA;SYONO, MOHD, ISMAHADI |
发明人 |
SULAIMAN, SURAYA;SYONO, MOHD, ISMAHADI |
分类号 |
H01L29/00;H01H59/00 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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