发明名称 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To increase the number of semiconductor elements to be stacked while maintaining wire bondability when a semiconductor device is constituted by stacking semiconductor elements in multistage on a wiring board. <P>SOLUTION: A plurality of semiconductor elements 9 constituting a first element group 12 are stacked stepwise on a wiring board 2. On the first element group 12, a plurality of semiconductor elements 9 constituting a second element group 13 are stacked stepwise while being directed opposite to the first element group 12. A semiconductor element 9 on the lowermost stage in the second element group 13 is stacked directly above a semiconductor element 9 on the uppermost stage in the first element group 12 through an insulating adhesive layer 15 functioning as a spacer layer, and the element side end of a metal wire 14 connected with the semiconductor element on the uppermost stage is buried in the insulating adhesive layer 15. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009158739(A) 申请公布日期 2009.07.16
申请号 JP20070335666 申请日期 2007.12.27
申请人 TOSHIBA CORP 发明人 NISHIYAMA TAKU;OKUMURA NAOHISA
分类号 H01L25/065;H01L25/07;H01L25/18 主分类号 H01L25/065
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