| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve a semiconductor device composed of IGBT elements and commutation diode elements in the resistance properties, on the same semiconductor substrate, and also to provide its manufacturing method. <P>SOLUTION: The semiconductor device includes IGBT elements in a mode provided with the commutation diode elements in an element forming region in a first conductivity type semiconductor substrate and a gate electrode on the surface side. The semiconductor substrate has the element forming region and an annular outer circumference region surrounding the element forming region. A second conductivity type collector region constituting the IGBT elements and a first conductivity type cathode region constituting the commutation diode element are provided only on the back side surface of the element forming region out of surface layers on the back side of the semiconductor substrate. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
