发明名称 |
Flash memory device including multilayer tunnel insulator and method of fabricating the same |
摘要 |
A flash memory device may include a lower tunnel insulation layer disposed on a substrate, an upper tunnel insulation layer disposed on the lower tunnel insulation layer, a floating gate disposed on the upper tunnel insulation layer, an intergate insulation layer disposed on the floating gate; and a control gate disposed on the intergate insulation layer.
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申请公布号 |
US2009179252(A1) |
申请公布日期 |
2009.07.16 |
申请号 |
US20080292674 |
申请日期 |
2008.11.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BAEK SUNG-KWEON;YANG SANG-RYOL;CHOI SI-YOUNG;KOO BON-YOUNG;HWANG KI-HYUN;LEE DONG-KAK |
分类号 |
H01L29/788;H01L29/423;H01L29/68 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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