SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME

摘要

A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si-CH3 functional groups, and another fraction of the C atoms are bonded as Si-R-Si, wherein R is phenyl, -[CH2]n- where n is greater than or equal to 1, HC-CH, C-CH2, C-C or a [S]n linkage, where n is a defined above.