METHODS FOR FABRICATING PMOS METAL GATE STRUCTURES
摘要
Methods of forming a microelectronic structure are described. Those methods may include forming a gate dielectric layer on a substrate, forming a metal gate layer on the gate dielectric layer, and then forming a polysilicon layer on the metal gate layer in situ, wherein the metal gate layer is not exposed to air.
申请公布号
WO2009088588(A2)
申请公布日期
2009.07.16
申请号
WO2008US85249
申请日期
2008.12.02
申请人
INTEL CORPORATION;METZ, MATTHEW V.;DOCZY, MARK L.;DEWEY, GILBERT;KAVALIEROS, JACK
发明人
METZ, MATTHEW V.;DOCZY, MARK L.;DEWEY, GILBERT;KAVALIEROS, JACK