摘要 |
<p>A chemical mechanical polishing method including a step of forming a plurality of interlayer insulating films so as to coat a plurality of projecting patterns, at least one of the plurality of projecting patterns being formed on each of a plurality of substrates, whereby the plurality of projection patterns have different area ratios R with respect to the corresponding substrates, and performing a flattening process on the interlayer insulating films before linear approximation; a step of obtaining a linear approximation formula R=aT+b expressing a relationship between the area ratio R and a polishing time T, where R1, R2, R3, ···, Rx represent the area ratio R of each of the projecting patterns with respect to the corresponding substrates, and T1, T2, T3, ···, Tx represent the polishing time T required for achieving a target film thickness when performing the flattening process by polishing each of the interlayer insulating films coating the projecting patterns; and a step of calculating, with the use of a formula T=(R-b)/a, the polishing time T for the interlayer insulating films coating the projecting patterns having the area ratio R.</p> |
申请人 |
RICOH COMPANY, LTD. |
发明人 |
MIYATA, MASANORI;USAMI, TARO;SOGAWA, KOICHI;NISHIHARA, KENJI;UEHARA, TADAO;CHIN, SHISYO;TERATANI, HIROAKI;SUZUKI, AKINORI;KOHNO, YUUICHI;OKADA, TETSUYA;HARUKI, TOHRU |