Laser-produced plasma EUV light source with isolated plasma
摘要
<p>An EUV radiation source (40) that includes a nozzle (42) positioned a far enough distance away from a target region (50) so that EUV radiation (56) generated at the target region (50) by a laser beam (54) impinging a target stream (46) emitted from the nozzle (42) is not significantly absorbed by target vapor proximate the nozzle (42). Also, the EUV radiation (56) does not significantly erode the nozzle (42) and contaminate source optics (34). In one embodiment, the nozzle (42) is more than 10 cm away from the target region (50).</p>
申请公布号
EP1492395(A3)
申请公布日期
2009.07.15
申请号
EP20030026825
申请日期
2003.11.20
申请人
UNIVERSITY OF CENTRAL FLORIDA FOUNDATION, INC.
发明人
HARTLOVE, JEFFREY S.;MICHAELIAN, MARK E.;SHIELDS, HENRY;FORNACA, STEVEN W.;MCNAUGHT, STUART J.;MARTOS, FERNANDO;MOYER, RICHARD H.