| 摘要 |
A method for forming a storage node electrode of a semiconductor device is provided to prevent topology imprint due to minute defects by discharging impurity caused by a process of forming a storage node insulating layer. A storage node insulating film(125) is formed on an interlayer insulating film(105) of a semiconductor substrate(100) in which a contact plug(110) is provided. A treatment using oxygen plasma is performed on the storage node insulating film. A hard mask film including carbon is formed on the storage node insulating film. A storage node contact hole(155) is formed within the storage node insulating film by performing an etch process using a hard mask film pattern as a mask. A storage node electrode(160) is formed on an exposed surface of the storage node contact hole.
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