SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor integrated circuit device and a manufacturing method thereof are provided to increase intensity of semiconductor chip and substrate by burying inside of a grinding mark with a buried film and forming the grinding mark in a longitudinal direction of a semiconductor chip. A semiconductor integrated circuit device includes a substrate(100), a grinding mark and a buried film. The grinding mark is recessed to be formed at a bottom surface of the substrate. The grinding mark is extended in one direction. The buried film buries the recess region of the grinding mark.