Semiconductor structure with interconnect comprising sliver and method of forming the same

摘要

The method involves providing a semiconductor substrate (200) comprising a layer of dielectric material (210), where a recess is provided in the layer of dielectric material. The recess is filled with a material comprising silver. A layer of material comprising rhodium (214) is formed over one of a sidewall and a bottom surface of the recess before filling the recess with the material comprising silver (216). The layer of material comprising rhodium is additionally formed over portions of a semiconductor substrate outside the recess.