| 摘要 |
A method for forming a device isolation film of a semiconductor device is provided to suppress generation of defects in the device isolation film by compensating for deficiency phenomenon of impurity in a curing process. A semiconductor substrate(100) in which a trench(107) is formed is provided. A first insulating film(108) is formed on an entire surface of the semiconductor substrate including the surface of the trench. A silicon film containing oxygen is formed on the first insulating film. A second insulating film(110) is formed on the silicon film which is formed within the trench.
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