| 摘要 |
<p>A method for manufacturing a flash memory device is provided to easily achieve coupling ratio as to pattern integration by forming SiO2 film without a transition layer through ozone oxidation process in forming a oxide film of a dielectric film. A semiconductor substrate(100) is provided. A tunnel insulating film(102) and a charge storing film are formed in an active region of the semiconductor substrate. A device isolation film(108) is formed in a device isolation region of the semiconductor substrate. The device isolation film exposes a portion of a sidewall of the charge storing film. A dielectric film(116) is formed on the charge storing film and the device isolation film. The dielectric film is formed by depositing a first oxide film(110), a nitride film(112) and a second oxide film(114). A conductive film is formed on the dielectric film. At least one of the first and second oxide films is formed by using an ozone oxidation process.</p> |
