PHASE CHANGE LAYER AND PHASE CHANGE MEMORY DEVICE COMPRISING THE SAME

摘要

A phase-change layer and a phase change memory device including the same are provided, which can enhance the degree of integration of PRAM by reducing distance between the memory cells. The phase-change layer comprises a plurality of first areas(10) and the second area(20). A plurality of first areas are dispersed in the first space and are filled with the phase change material. The second area is the rest of the first space and is filled with the dielectric material. In the phase-change layer, the content of the dielectric material is 20 mol% or less. The thickness of the first area is 100nm or less. The storage node comprises the phase-change layer. The switching element is connected to the storage node.