METHOD MANUFACTURING OF SEMICONDUCTOR DEVICE

摘要

A manufacturing method of the semiconductor device is provided, which can form the protective film on the metal wiring in the uniform thickness. The metal wiring is formed at the upper part of the semiconductor substrate(200) having device structure. By using the nitride film in which the boron is contained on the metal wiring, the protective film is formed. The nitride film in which the boron is contained is UV-processed. The low dielectric insulator layer(230) is formed on the nitride film in which the boron is contained. The nitride film in which the boron is contained is formed as the SiBN film. The nitride film in which the boron is contained is formed in a thickness of 200~500Å. The nitride film in which the boron is contained is formed at 350~400 deg.C.