| 摘要 |
A method for forming columnar capacitor of the semiconductor device is provided, which can secure the process stability by minimizing the bad effect by the seam. The inter-layer insulating films(16,18) are formed in the top of semiconductor substrate in which the storage electrode contact plug(15) is formed. Until the inter-layer insulating film is exposed, the first planarization process about the first lower electrode material layer is performed and the first lower electrode material layer pattern is molded. The second lower electrode material layer(21b) is deposited in the exposed inter-layer insulating film and the upper surface of the etched first lower electrode material layer pattern. The capping oxide layer is deposited at the upper part of the second lower electrode material layer.
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