发明名称 |
Technique for improving ion implantation based on ion beam angle-related information |
摘要 |
A technique for improving ion implantation based on ion beam angle-related information is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for improving ion implantation. The method may comprise obtaining angle-related information associated with an ion beam. The method may also comprise calculating, based on the angle-related information, an ion beam angle distribution over a wafer for one or more potential scanning modes. The method may further comprise selecting a desired scanning mode from the one or more potential scanning modes based on an evaluation of performance metric caused by the ion beam angle distribution.
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申请公布号 |
US7561983(B2) |
申请公布日期 |
2009.07.14 |
申请号 |
US20060537033 |
申请日期 |
2006.09.29 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
GUPTA ATUL;ENGLAND JONATHAN GERALD |
分类号 |
G06F19/00 |
主分类号 |
G06F19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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