发明名称 Semiconductor device fabricating method
摘要 To improve the fabrication yield of semiconductor devices. A semiconductor device where a desired number of semiconductor chips are laminated in the thickness direction thereof is fabricated by repeating, an arbitrary number of times such as one time or two or more times, a step of bonding and mounting another support substrate laminate on first bumps exposed by separating and removing one support substrate from a support substrate laminate composite where second bumps of two support substrate laminates including plural semiconductor wafers mounted on support substrates have been made to face each other and are electrically connected.
申请公布号 US7560302(B2) 申请公布日期 2009.07.14
申请号 US20070723526 申请日期 2007.03.20
申请人 OKI SEMICONDUCTOR CO., LTD. 发明人 EGAWA YOSHIMI
分类号 H01L21/44 主分类号 H01L21/44
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