| 摘要 |
An IC chip, including a switch LDMOS device and an analog LDMOS device, is configured on a substrate having a first conductive type. Components of the two LDMOS devices respectively include two gate conductive layers configured on two first active regions of the substrate. A common source contact region having a second conductive type is configured in a second active region, which is configured between the two first active regions. An isolation structure is included for isolating the second active region and the first active regions. The isolation structure between the first active regions and the second active region has a length "A" extending along a longitudinal direction of a channel under each gate conductive layer, and each gate conductive layer on each first active region has a length "L" extending along the longitudinal direction of the channel, the two LDMOS devices have different A/L values.
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