| 摘要 |
A method for forming a strained semiconductor device is described. A substrate including a first semiconductor material and having a first conductivity type is provided. A semiconductor layer of a second conductivity type is formed contacting with the substrate, wherein the semiconductor layer includes the first semiconductor material and a second semiconductor material and has a dopant of the second conductivity type. In-situ annealing is then conducted to diffuse the dopant.
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