发明名称 Gate driver circuit for power transistor
摘要 A circuit arrangement with a gate driver circuit for a power transistor is disclosed which is suitable for low voltage applications, permitting a rail-to-rail output without a loss in speed/bandwidth, which is very simple, low cost, low current and area efficient. The gate driver circuit comprises a drain follower with a MOS driver transistor having the gate connected to an interconnection node of a capacitive divider. A first capacitor of the capacitive divider is connected between the drain and the gate and a second capacitor is connected between the gate and an input of the gate driver circuit. The gate driver has the required low impedance for driving the gate of the power transistor.
申请公布号 US7560973(B2) 申请公布日期 2009.07.14
申请号 US20060561681 申请日期 2006.11.20
申请人 TEXAS INSTRUMENTS DEUTSCHLAND GMBH 发明人 RINCON-MORA GABRIEL ALFONSO;ARNOLD MATTHIAS
分类号 H03K17/687 主分类号 H03K17/687
代理机构 代理人
主权项
地址