发明名称 |
Tri-gate devices and methods of fabrication |
摘要 |
The present invention is a semiconductor device comprising a carbon nanotube body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer is formed on the top surface of the carbon nanotube body and on the laterally opposite sidewalls of the carbon nanotube body. A gate electrode is formed on the gate dielectric on the top surface of the carbon nanotube body and adjacent to the gate dielectric on the laterally opposite sidewalls of the carbon nanotube body.
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申请公布号 |
US7560756(B2) |
申请公布日期 |
2009.07.14 |
申请号 |
US20060588066 |
申请日期 |
2006.10.25 |
申请人 |
INTEL CORPORATION |
发明人 |
CHAU ROBERT S.;DOYLE BRIAN S.;KAVALIEROS JACK;BARLAGE DOUGLAS;DATTA SUMAN |
分类号 |
H01L29/80;H01L21/336;H01L29/423;H01L29/786;H01L31/112 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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