发明名称 Process for making a semiconductor device having a roughened surface
摘要 An oxide film formed on the surface of copper film of an electrode pad is cleaned by oxalic acid after unevenness is formed on the surface of copper film by treating the surface with organic acid. Thereby, stable resistance is obtained when carrying out a characteristic inspection by bringing a probe into contact with the electrode pad, and it is easily recognized by observation through a microscope that the probe is brought into contact with the electrode pad. In addition, wettability with respect to solder is satisfactory, and it is possible to favorably form a solder bump on the electrode pad.
申请公布号 US7560372(B2) 申请公布日期 2009.07.14
申请号 US20060525943 申请日期 2006.09.25
申请人 NEC ELECTRONICS CORPORATION 发明人 TOMIMORI HIROAKI;AOKI HIDEMITSU;MIKAGI KAORU;FURUYA AKIRA;TAO TETSUYA
分类号 H01L21/66;H01L23/485;H01L21/306;H01L21/3205;H01L23/488;H01L23/52 主分类号 H01L21/66
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