发明名称 |
Semiconductor laser device and method of fabricating the same |
摘要 |
A semiconductor laser device includes a first cavity and a second cavity formed apart from each other over a semiconductor substrate. The first cavity includes a first buffer layer and a first semiconductor layer including a first active layer, and the second cavity includes a second buffer layer and a second semiconductor layer including a second active layer. A window structure is provided in a region near an end face of each of the first semiconductor layer and the second semiconductor layer. A band gap of the first buffer layer is greater than that of the first active layer, and a band gap of the second buffer layer is greater than that of the second active layer.
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申请公布号 |
US7561609(B2) |
申请公布日期 |
2009.07.14 |
申请号 |
US20070907016 |
申请日期 |
2007.10.09 |
申请人 |
PANASONIC CORPORATION |
发明人 |
FUJIMOTO YASUHIRO;TAKAYAMA TORU;KIDOGUCHI ISAO |
分类号 |
H01S5/00;B82Y20/00;H01S5/16;H01S5/22;H01S5/343 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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