发明名称 |
Methods of making lateral junction field effect transistors using selective epitaxial growth |
摘要 |
Methods of making a semiconductor device such as a lateral junction field effect transistor (JFET) are described. The methods are self-aligned and involve selective epitaxial growth using a regrowth mask material to form the gate or the source/drain regions of the device. The methods can eliminate the need for ion implantation. The device can be made from a wide band-gap semiconductor material such as SiC. The regrowth mask material can be TaC. The devices can be used in harsh environments including applications involving exposure to radiation and/or high temperatures.
|
申请公布号 |
US7560325(B1) |
申请公布日期 |
2009.07.14 |
申请号 |
US20080102382 |
申请日期 |
2008.04.14 |
申请人 |
SEMISOUTH LABORATORIES, INC. |
发明人 |
MERRETT JOSEPH NEIL;SANKIN IGOR |
分类号 |
H01L21/337;H01L29/80 |
主分类号 |
H01L21/337 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|