| 摘要 |
An electrostatic discharge ("ESD") protection circuit having dynamically configurable series-connected diodes and a method for manufacturing the ESD protection circuit. A doped region of P-type conductivity and a doped region of N-type conductivity are formed in an SOI layer of P-type conductivity, wherein the doped regions are laterally spaced apart by a portion of the SOI layer. At least one gate structure is formed on the SOI region that is between the N-type and P-type doped regions. During normal operation, a portion of the SOI region that is adjacent to and between the P-type and N-type doped regions is biased so that it becomes a region of N-type conductivity, thereby forming two series-connected diodes. During an ESD event, the bias is changed so that the region between the P-type and N-type doped regions becomes a region of P-type conductivity, thereby forming a single P-N junction diode.
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