发明名称 Method for manufacturing semiconductor device
摘要 A diffusion barrier film, a second insulating film, and a cap film are sequentially laminated on a first insulating film over a substrate. A wiring trench portion is formed extending therethrough to the first insulating film, assuming that the ratio of a width of the wiring trench portion in a direction orthogonal to its extending direction to a height of the wiring trench portion is 2.8 times even at a maximum. A barrier metal film is formed to cover the cap film and the wiring trench portion. A wiring film is deposited to cover the barrier metal film. The wiring film and the barrier metal film are chipped away until the surface of the cap film is exposed from the surface of the wiring film, thereby to form a wiring portion which buries the wiring trench portion.
申请公布号 US7560378(B2) 申请公布日期 2009.07.14
申请号 US20060501691 申请日期 2006.08.10
申请人 OKI SEMICONDUCTOR CO., LTD. 发明人 TOKITOH SHUNICHI
分类号 H01L21/20 主分类号 H01L21/20
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