Semiconductive device fabricated using a raised layer to silicide the gate

摘要

In one aspect, the invention provides a method of fabricating a semiconductive device 200 that comprises forming a raised layer [510] adjacent a gate [340] and over a source/drain [415], depositing a silicidation layer [915] over the gate [340] and the raised layer [510], and moving at least a portion of the silicidation layer [915] into the source/drain [415] through the raised layer [510].