发明名称 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
摘要 A resistance variable memory cell and method of forming the same. The memory cell includes a first electrode and at least one layer of resistance variable material in contact with the first electrode. A first, second electrode is in contact with a first portion of the at least one layer of resistance variable material and a second, second electrode is in contact with a second portion of the at least one layer of resistance variable material.
申请公布号 US7560723(B2) 申请公布日期 2009.07.14
申请号 US20060511311 申请日期 2006.08.29
申请人 MICRON TECHNOLOGY, INC. 发明人 LIU JUN
分类号 H01L29/06;H01L21/8242 主分类号 H01L29/06
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