METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A manufacturing method of the semiconductor device is provided, which can prevent the disappearance of the element isolation film in the oxide film removal for the ion implantation. The element isolation film(210) is formed within the element isolation region of the semiconductor substrate(200). The semiconductor substrate comprises the active area and the element isolation region having the gate forming area. The oxide film(220) for the ion implantation is formed on the active area of the semiconductor substrate. The oxide film for the ion implantation is removed. The gate forming area of the angular region is etched and the first groove is formed in the active area. The second groove is formed within the element isolation film. The gate insulating layer is formed in the surface of the active area including the first groove.