| 摘要 |
<p>A manufacturing method of the semiconductor device is provided, which prevents the weak point problem by forming a word line. In the active area, the tunnel insulating layer and the first conductive film(114) are formed. In the element isolation region, the element isolation film(116) is formed. The dielectric film and the second conductive film(120) are formed in the first electric conduction membrane upper part including the element isolation film. The second conductive film of the dummy cell pattern region is removed. The gate of the real cell pattern region is patterned while removing the second conductive film of the dummy cell pattern region. The width of the element isolation film formed in the dummy cell pattern region is widely formed wider than the width of the element isolation film formed in the real cell pattern region.</p> |
