SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device and a manufacturing method thereof are provided, which improve turn on current value by providing the gate within the gate trench. The gate trench(112) within the substrate(110) has the side wall contacting with source and drain region(120). The gate insulating layer(130) is formed along the gate trench inner surface. The metal pattern(145) is formed at the lower part of the gate trench. The non-metal conductive pattern(155) is formed in the upper part of the metal pattern. The channel region within substrate faces the metal pattern and non-metal conductive pattern. The depth of the gate trench is deeper than the depth of the drain region and source.