发明名称 BUBBLE GENERATION UNIT AND SUBSTRATE ETCHING APPARATUS INCLUDING THE SAME
摘要 A bubble generation unit and an apparatus for etching wafer including the same are provided, which can improve the plane of wafer by precisely controlling the originating site of the bubble. The bubble generation unit unites with the bath(110) and generates the bubble. Bath stores the etchant for etching wafer. The bubble pipe(120) is positioned in the internal space of bath and provides the gas for producing the bubble to etchant. The pipe holder(130) is positioned in the outer side of bath and is connected to the bubble pipe. The screw shaft unites with the pipe holder and forms the screw thread at the outside. The volume dial is combined with one side of the screw shaft. The volume dial moves the pipe holder forward and backward along the screw shaft.
申请公布号 KR20090076623(A) 申请公布日期 2009.07.13
申请号 KR20080002673 申请日期 2008.01.09
申请人 SILTRON INC. 发明人 KANG, HEE MYUNG
分类号 H01L21/302;H01L21/304;H01L21/306 主分类号 H01L21/302
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