| 摘要 |
An input circuit of semiconductor memory device and a control method thereof are provided to prevent the toggling of the output signal of latch by blocking the current path for the inactive interval of the control signal. An input circuit(100) of semiconductor memory device comprises the first input unit(200), the second input unit(300) and a latch control unit(400). The first input unit latches the chip select signal(/CS) in response to the clock signal(CLK). The first input unit comprises a CARR latch(210). The CARR latch latches the input signal at the rising edge of clock signal. The second input unit comprises the first to third latch units(310~330). The first to third latch units latches the command/address signal(CA) on the different timing. The latch control unit controls the operation of the first to third latch units.
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