SEMICONDUCTOR LASER DIODE

摘要

A semiconductor laser diode is provided to increase a kink level by suppressing the generation of a high order mode. An active layer(120) is formed in an upper part of the N-semiconductor lamination layer. A P-semiconductor lamination layer(130) is formed in the upper part the active layer. A ridge(140) is formed in the upper part of the P-semiconductor lamination film. A first current blocking layer is formed in a lateral side of the ridge and the upper part of the P-semiconductor layer and is made of the first oxide material. The second current blocking layer(160) is formed in the first current blocking layer and is made of the second oxide material identical to the first oxide material. The second current blocking layer has less oxygen than the first oxide material.