| 摘要 |
The invention concerns the use of the ruthenium containing precursor having the formula (Rn-chd) Ru(CO)3, wherein:-(Rn-chd) represents a cyclohexadiene (chd) ligand substituted with n substituents R, any R being in any position on the chd ligand;-n is an integer comprised between 1 and 8 (1 <= n <= 8) and represents the number of substituents on the chd ligand;-R is selected from the group consisting of C1-C4 linear or branched alkyls, alkylamides, alkoxides, alkylsilylamides, amidinates, carbonyl and/or fluoroalkyl for R being located in any of the eight avalaible position on the chd ligand, while R can also be oxygen O for substitution on the C positions in the chd cycle which are not involved in a double bond for the deposition of a Ru containing film on a substrate.
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