| 摘要 |
An apparatus for generating plasma under atmospheric pressure is provided, which makes uniform and efficient plasma processing possible under the atmospheric pressure. The atmospheric pressure plasma generation reactor capable of ashing or etching comprises a plurality of long rod-type dielectrics(1510), the rod-type high voltage electrode(1513), the coupling plane(1580), and integrated ground electrode(1520). The rod-type high voltage electrode is arranged in the inner center of each dielectric. A plurality of dielectrics are perpendicularly combined with the coupling plane. The integrated ground electrode completely surrounds each dielectric at an interval. In the ground electrode, the horizontal plane is integrally formed with the vertical plane.
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