发明名称 SEMICONDUCTOR DEVICE PRODUCTION APPARATUS AND SEMICONDUCTOR DEVICE PRODUCTION METHOD
摘要 A sealing member (21) is lifted to cause its edge (21a) to be in contact with a contact surface (17a) of a support member (13). With a precision discharge nozzle (5) isolated, a gas discharge device (41) is operated to discharge gas inside a chamber (1) to reduce the pressure in the chamber (1) to a predetermined level. Then, purge gas is introduced into the chamber (1) from a purge gas supply source (31) via a gas introduction section (26) to replace the atmosphere in the chamber (1) with the purge gas, and the pressure in the chamber (1) is returned to the atmospheric pressure. After that, the sealing member (21) is lowered to release the precision discharge nozzle (5) from the isolation. Then, liquid drops of a liquid device material are discharged toward the surface of a substrate (S) while a carriage (7) is reciprocated in the X direction.
申请公布号 KR20090076998(A) 申请公布日期 2009.07.13
申请号 KR20097011007 申请日期 2007.11.27
申请人 发明人
分类号 B05C11/00;B05C5/00;H01L21/288;H01L21/3205 主分类号 B05C11/00
代理机构 代理人
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