MENUFACTURING METHOD OF NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE BY THE SAME

摘要

A method of manufacturing a nitride compound semiconductor luminance device is provided, which minimizes the stress between substrate and the epitaxial layer. The current spreading layer(52) is formed on the substrate(51). A part of the current spreading layer is removed and a plurality of openings provided to the domain for the light emitting structure formation is formed. The first conductivity type nitride semiconductor layer(53), the active layer(54), and the second conductive type nitride semiconductor layer(55) are successively grown through a plurality of openings in the top of the substrate and the light emitting structure is formed. The first and the second electrode are formed in order to be electrically connected to the respective first and the second conductive type nitride semiconductor layer. A plurality of openings forms the mesh structure.