| 摘要 |
<p>A formation method of the semiconductor device is provided, which improve the treatment quantity of the scanner equipment by forming the cylinder capacitor. The insulating layer(310), the first hard mask layer(320), and the second hard mask layer(330) and the third hard mask layer are formed on the semiconductor substrate(300). The first photoresist pattern is formed on the whole surface by exposing and developing the full die of the wafer. The third hard mask layer pattern(370) is formed by etching the third hard mask layer. The first photoresist pattern is removed after the third hard mask layer pattern formation. The second photosensitive pattern exposing the second hard mask layer is formed by exposing and developing the inner die domain on the semiconductor board. The bottom electrode area is opened by etching the second hard mask layer, the first hard mask layer, and insulating layer.</p> |
