Nano wire and Memory device according to current-induced domain wall displacement using it,申请号KR20070126001-传众专利搜索

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发明名称	Nano wire and Memory device according to current-induced domain wall displacement using it
摘要
申请公布号	KR100907471(B1)	申请公布日期	2009.07.13
申请号	KR20070126001	申请日期	2007.12.06
申请人		发明人
分类号	G11B9/02;G11C11/22	主分类号	G11B9/02
代理机构		代理人
主权项
地址

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