| 发明名称 |
PHOTODIODE WITH SCHOTTKY BARRIER, ULTRAVIOLET SENSITIVE |
| 摘要 |
The invention proposes a photodiode with Schottky barrier, ultraviolet sensitive, based on zinc selenide, which comprises a semi-transparent layer of nickel, an indium layer. |
| 申请公布号 |
UA42429(U) |
申请公布日期 |
2009.07.10 |
| 申请号 |
UA20080014260U |
申请日期 |
2008.12.10 |
| 申请人 |
PEREVERTAILO VOLODYMYR LEONTIIOVYCH;RHYZHYKOV VOLODYMYR DIOMYDOVYCH;DOBROVOLSKYI YURII HEORHIOVYCH;SHABASHKEVYCH BORYS HRYHOROVYCH;HALKIN SERHII MYKOLAIOVYCH;VORONKIN YEVHEN FEDOROVYCH |
发明人 |
PEREVERTAILO VOLODYMYR LEONTIIOVYCH;RHYZHYKOV VOLODYMYR DIOMYDOVYCH;DOBROVOLSKYI YURII HEORHIOVYCH;SHABASHKEVYCH BORYS HRYHOROVYCH;HALKIN SERHII MYKOLAIOVYCH;VORONKIN YEVHEN FEDOROVYCH |
| 分类号 |
H01L31/06;H01L31/0264 |
主分类号 |
H01L31/06 |
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