| 摘要 |
The invention relates to the obtaining of semiconductor materials, in particular thermoelectrical materials based on monocrystals of the solid solutions of compounds of АВ, АВ. A device for growth of monocrystals of solid solutions of compounds АВ, АВby sublimation method consists of container for placing of charge of starting components and high-temperature pipe furnace with internal diameter more than the external diameter of container. The container consists of two parts connected along the longitudinal symmetry axis, at that the end face of one part with smaller diameter has a capillary introduced in the high-temperature zone of the another part with bigger diameter where the charge is placed. The relation of capillary diameter of container part with smaller diameter to the internal diameter of container part with the bigger diameter is in the range of 0.010.0075. The invention allows to obtains thermoelectrically materials based on monocrystals of the solid solutions of compounds АВ, АВwith set quality and geometrical sizes. |
