发明名称 PLANT FOR OBTAINING OF HIGH PURITY SILICON
摘要 A plant for obtaining of high-purity silicon comprising a housing, pipes for component introducing and discharge of reaction products, compressors, reaction chamber, heaters, heat exchangers, process control system, compacting mechanism, containing at least one bucket, preferably, of plunger type, located in the reaction chamber and connected by control system via sealing device with a drive with the possibility of periodical control of a layer of silicon being deposited.
申请公布号 UA87421(C2) 申请公布日期 2009.07.10
申请号 UA20080010389 申请日期 2008.08.14
申请人 TARASEVYCH YURII STEFANOVYCH;OHENKO VOLODYMYR MYKHAILOVYCH;BAKAI EDUARD APOLINARIIOVYCH;BOHOMAZ VALERII IHOREVYCH;TARASEVYCH OLEKSII YURIIOVYCH 发明人 TARASEVYCH YURII STEFANOVYCH;OHENKO VOLODYMYR MYKHAILOVYCH;BAKAI EDUARD APOLINARIIOVYCH;BOHOMAZ VALERII IHOREVYCH;TARASEVYCH OLEKSII YURIIOVYCH
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