| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device which can suppress degradation of reliability to each component, while improving a property for writing data to a memory cell in a low power supply voltage by controlling potential of a bit line, and has a stable write performance. <P>SOLUTION: The semiconductor storage device comprises: a memory cell 100 arranged at an intersection point of a word line and a bit line; a precharge circuit 101 connected to the bit line; and a write circuit. The write circuit comprises: a column selection circuit 102 controlled by a light control signal; a transistor QN7 which controls potential of a selected bit line to the a first potential (for example, 0 V); a capacitive element CAP which controls the potential of the selected bit line to a second potential (for example, negative potential) which is lower than the first potential; and a clamp circuit 103A which clamps the second potential when the power supply voltage becomes high. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
