SCANNING EUV INTERFERENCE IMAGING FOR EXTREMELY HIGH RESOLUTION

摘要

A system and method are provided for writing patterns onto substrates. First and second beams of extreme ultraviolet (EUV) radiation are produced. An exposure unit is used to project the first and second beams of EUV radiation onto a substrate. The first and second beams of radiation interfere with each other to expose a first set of parallel lines at an exposure field of the substrate.